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Toshiba ships extended C-band GaAs FET

Posted: 22 May 2002 ?? ?Print Version ?Bookmark and Share

Keywords:tim5964 60sl 251? gaas fet? field effect transistor? extended c band fet? satellite communications fet?

Claimed to be the industry's first 60W internally-matched C-band GaAs FET, the TIM5964-60SL-251 FET from Toshiba America Electronic Components Inc. operates in the 5.9GHz to 6.75GHz range and is targeted for use in solid-state power amplifiers for gateway or earth-station satellite communications, VSATs, and for long-haul, point-to-point terrestrial communications.

Manufactured using the company's HFET process technology, the GaAs FET is also suitable for use in other wireless communication systems including point-to-point radio applications.

The TIM5964-60SL-251 increases the maximum output power of the amplifiers within existing design platforms, and allows designers to use a single transistor for all satellite communications designs in the extended C-Band range.

The device also helps in minimizing intermodulation distortion and harmonic spurious signals in satellite communication systems.

The FET is shipped in a 2-16G1B package and offers a high gain of 8.5dB. The device also has a 1dB compression point of 48dB and draws 15A.

Prices start at $1,136 each.

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