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SEI develops low-dislocation single-crystal GaN substrate

Posted: 19 Jun 2002 ?? ?Print Version ?Bookmark and Share

Keywords:single-crystal GaN substrate? violet lasers? optical discs? Blu-ray Disc optical video recording?

Sumitomo Electric Ind. Ltd (SEI) has developed a single-crystal GaN substrate that may be used in violet lasers for its next-generation Blu-ray Disc optical video recording technology. The Blu-ray Disc enables the recording and writing of data from and to optical discs using a violet laser that has a shorter wavelength than the red laser used in DVD players.

SEI has developed its own GaN substrate fabrication process called the Dislocation Elimination by Epitaxial growth with inverse-pyramidal Pits, or "DEEP" technique which reduces dislocations by forming inverse-pyramidal pits on the surface of the crystal.

The GaN substrate has low-dislocation areas which are arranged orderly to allow easy device fabrication. Each low-dislocation area of this substrate is about 500?m in diameter and has a density between 10,000 and 100,000 per square centimeter.

Efforts to develop a two-inch substrate of this type have been successful and SEI has started shipping samples. After laser device manufacturers evaluate the GaN substrate, mass-production will start by the time Blu-ray Disc is introduced to the market. SEI estimates the production for these substrates to reach 300 per month by April 2003.

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