Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > RF/Microwave

Toshiba Ku-band FET produces 18W

Posted: 20 Jun 2002 ?? ?Print Version ?Bookmark and Share

Keywords:tim1414 18l? ku band fet? field effect transistor? satcom fet? vsat fet?

The TIM1414-18L GaAs FET from Toshiba Corp. produces an output power of 18W in the 14GHz to 14.5GHz range, and is targeted for use in solid-state power amplifiers (SSPA) for Ku-band satellite transmitters and VSATs.

Claimed by the company to be first 18W device of its kind, the 21.5-by-12.9mm device is shipped in a hermetically-sealed 2-11C1B package similar to Toshiba's existing 10W and 15W Ku-band GaAs FETs, providing designers the ability to realize a higher output power SSPA without requiring significant design changes.

Implemented using the company's HFET process technology, the TIM1414-18L draws a maximum of 6A, provides a gain of 6dB and has a minimum intermodulation distortion of -25dBc.

Samples of the TIM1414-18L are scheduled to be available in September 2002, priced at $1,100 in quantities of 1,000.

Article Comments - Toshiba Ku-band FET produces 18W
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top