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CAS develops InP single-crystal growth technology

Posted: 03 Jul 2002 ?? ?Print Version ?Bookmark and Share

Keywords:InP single crystals? wafer? solar cell? fiber-optic communication network? optoelectronic IC?

The Material Science & Technology Center of CAS' Institute of Semiconductor has announced a breakthrough technology for InP single crystal growth. CAS researchers are said to have solved problems of InP production by repeatedly growing 2-inch InP single crystals, resulting in quality and production efficiency.

Limited by the production technique, only a couple of domestic manufacturers have mass produced InP single crystals. The center says the latest development can accelerate China's domestic InP single crystal R&D and industrialization, making them at par with international levels.

The market scale of InP products, with this latest development, is expected to reach $500 million by 2006 and is seen to grow further in the coming years with wider application in 40Gbps fiber-optic communication networks, in optoelectronic ICs for 10Gbps optic receiver, power transmission wafers for 2.5G and 3G mobile phones, satellite signal receivers, radars and testing and measuring equipment.

CAS plans to sell its InP single crystal material to the domestic and overseas markets. Moreover, their pure InP single crystal, Fe-InP single crystal, S-InP single crystal, Sn-InP single crystal and Zn-InP single crystals are applicable to long wavelength lasers for communications, InP HEMT and HBT devices, optoelectronic semiconductors and solar cells.

According Zhao Youwen, a researcher at CAS, they eventually plan to establish a company that will engage in the production of InP products.





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