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Cree to develop substrates for microwave, power devices

Posted: 04 Jul 2002 ?? ?Print Version ?Bookmark and Share

Keywords:substrates? SiC MESFET? GaN HEMT microwave device? wafer? MOSFETs?

Cree Inc. has received two contracts, worth about $14.4 million, from the Office of Naval Research (ONR) of the U.S. military as part of the Wide Bandgap Semiconductor Technology Initiative of the Defense Advanced Research Projects Agency (DARPA).

The first contract provides for $8.8 million in government funding over an 18-month period for the development of four-inch semi-insulating substrates, supporting the requirements of both SiC MESFET and GaN HEMT microwave devices. Also included is work on the development of uniform SiC MESFET and GaN HEMT epitaxial processes on larger diameter wafers and studies correlating material advances with device performance.

The second contract, worth $5.6 million, also over an 18-month period, is for the development of low-defect density, four-inch n-type 4H-SiC substrates that would allow the fabrication of large-area, high-current, high-voltage power devices. Cree will further develop uniform epitaxial processes required for the fabrication of devices with blocking voltages in excess of 10kV. Additionally, Cree will pursue device development focused on SiC PiN rectifiers and MOSFETs based on these materials.

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