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ASM receives patents for PECVD low-k dielectric technology

Posted: 09 Jul 2002 ?? ?Print Version ?Bookmark and Share

Keywords:low-k dielectric plasma enhanced chemical vapor deposition film deposition technology? back-end-of-line interconnect structures? semiconductors? PEVCD? BEOL?

ASM Int. N.V. has been granted patents no. 6,352,945, 6,383,955 and 6,410,463 by the U.S. Patent & Trademark Office, covering advanced low-k dielectric plasma enhanced chemical vapor deposition (PECVD) film deposition technology used in back-end-of-line (BEOL) interconnect structures to increase the speed and performance of next-generation semiconductors.

"Our Aurora low-k films offer low-cost film deposition solution on 200mm and 300mm wafers as these films are PECVD deposited on hot wafer and do not need anneal steps," said Devendra Kumar, director of BEOL Technology. "Aurora low-k films (less than 3) are deposited from organic silicon precursors containing oxygen attached directly to silicon, and have superior thermal stability and mechanical strength. This enables chip manufacturers to cost-effectively integrate Aurora film with multi-level copper interconnect structures and packaging."

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