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Power/Alternative Energy??

Siliconix samples 30V MOSFETs for single, multiphase power supply circuits

Posted: 09 Jul 2002 ?? ?Print Version ?Bookmark and Share

Keywords:si4364dy? si4858dy? si4364dy? power mosfet? 30v mosfet?

Vishay Siliconix has began sampling a series of 30V n-channel TrenchFET power MOSFETs for use in single or multiphase power supply circuits in core voltage dc/dc converters. The sysnchronous low-side and control high-side power MOSFETs are claimed by the company to enable portable computers and game stations to run cooler, use lesser power, and function longer.

Suitable for low-side synchronous rectifier operation, the Si4364DY and Si4858DY minimizes conduction losses while improves efficiency with on-resistance ratings at least 12 percent lower than competing devices at a 4.5V gate drive.

The Si4364DY has an on-resistance rating of 5.5mW and typical gate charge of 62nC. It is designed for 200kHz to 300kHz applications where a 5V gate drive is used.

For higher-frequency applications from 500kHz to 1MHz using a 5V and higher gate drive, the Si4858DY offers a gate charge of 30.5nC and an on-resistance rating of 7mW at a 4.5V gate drive.

The Si4860DY is designed for both low- and high-side operation, and has an on-resistance rating of 11mW at a 4.5V gate drive. The device features a turn-on delay time of 18ns and a typical gate charge value of 13nC27 percent lower than competing devices capable of handling a 10A to 25A output current.

When used in both the low- and high-side positions, the Si4860DY offers an on-resistance-times-gate-charge product at least 22 percent lower than competing devices, while allowing designers to simplify the manufacturing process by using the same power MOSFET for both sockets.

The Si4364DY, Si4858DY, and Si4860DY are available in the SO-8 package and feature an operating junction and storage temperature range of -550C to 1500C. The Si4860DY also is available in DPAK, D2PAK, and in TO-251 packaging.





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