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EMCORE receives patent for semiconductor separation technique

Posted: 18 Jul 2002 ?? ?Print Version ?Bookmark and Share

Keywords:patent? semiconductor? device separation technique? gallium nitride? sapphire substrates?

EMCORE Corp., a provider of compound semiconductor technologies, has received a patent for its semiconductor device separation technique for gallium nitride-based and other materials grown on sapphire substrates. According to EMCORE, this technique virtually eliminates yield loss, requires low maintenance and significantly improves device fabrication cycle times.

Device separation using this technique, is achieved by laser ablation, where a laser beam is passed through optical elements and masks to produce a patterned laser projection. The patterned laser projection is then directed at the wafer surface and applied for a specified time at a specified power to achieve a precise cut into the wafer and thus increases the number of devices that can be fabricated from a single wafer.

"EMCORE's new technique for device separation will have a tremendous impact on the efficiency and cost of LED manufacturing. With the demand for blue and green LEDs exceeding the industry's capability to supply them, EMCORE provides a timely solution that will increase manufacturing volumes and reduce costs by improving yields," commented Reuben F. Richards Jr., president and CEO of EMCORE.





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