Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Power/Alternative Energy
Power/Alternative Energy??

Powerex IGBT targets applications for high-power inverters

Posted: 19 Jul 2002 ?? ?Print Version ?Bookmark and Share

Keywords:powerex? cm900du 24nf? cm1400du 24nf? igbt? insulated gate bipolar transistor?

Powerex Inc.'s Mega Power Dual is an optimized insulated-gate bipolar-transistor (IGBT) power device that offers a new carrier-stored trench gate bipolar transistor (CSTBT) chip and uses a light punch-through (LPT) process along with a plug-cell merged design.

The unit is targeted at high-power inverter applications, such as UPS, motor drives and utility interfaces.

The CSTBT chip is said to provide a decrease of Vce(sat), for optimizing total power loss.

In addition, the Mega Power Dual was designed with an LPT process for decreasing current leakage and mitigating thermal runaway, Powerex said. The result is a lower crosspoint for positive-temperature coefficient and an ability to be paralleled without matching, the company said.

The plug-cell merged design improves short-circuit safe operating area, Powerex said, by controlling the saturation current level and reducing gate capacitance.

One of the key advantages of the device is its package, which is 60 percent the size of two Powerex single 1kA devices.

Other features include a step main terminal with a simplified bus design, a symmetrical chip layout for efficient heat transfer and a high contact area with multi-bolt power terminals. The device is available in the 900A to 1.4kA, 1.2kV range.

Samples of Mega Power Dual units are available from stock to eight weeks at a price of $500 for type CM900DU-24NF and $760 for type CM1400DU-24NF, in quantities of 10.

EE Times

Article Comments - Powerex IGBT targets applications fo...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top