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Tegal develops plasma etch process for FeRAM materials

Posted: 24 Jul 2002 ?? ?Print Version ?Bookmark and Share

Keywords:plasma? etch? process? Ferroelectric? RAM?

Tegal Corp. has developed plasma etch processes for ferroelectric RAM (FeRAM) materials by developing and implementing patented technologies for the closed-loop control and monitoring of wafer temperatures during etching.

According to Tegal, these processes will overcome the challenges of process stability, sidewall residue and profile angle during high-temperature etch. Furhter, these processes is expected to enable temperature control of wafers in the range of 3500C to 4500,C which is the range of interest for plasma etch fabrication of FeRAM capacitor stacks, as well as etching at a full-stack profile angle of 880.





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