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TI launches latest bipolar-CMOS process

Posted: 12 Aug 2002 ?? ?Print Version ?Bookmark and Share

Keywords:SiGe? complementary bipolar-CMOS manufacturing process? BiCom-III? NPN? PNP-type bipolar transistor?

Texas Instruments Inc. has developed its latest SiGe complementary bipolar-CMOS manufacturing process, the BiCom-III, which integrates both NPN and PNP-type bipolar transistors.

According to the company, this integration enables 3X speed increase and a 50 percent noise reduction for op amps and other mixed-signal products. In high-speed wireless systems such as telephone basestations, LANs and data transfer stations, these features enable more channels with wider bandwidth in less space. Further, TI said that its range will eliminate intermediate frequency stages, enabling customers to simplify design while saving power and cost.

The BiCom-III process is scheduled for final qualification in Q3 of 2002 and volume manufacturing of its products on 200mm wafers is expected by the end of 2002.





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