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Power/Alternative Energy??

Siliconix MOSFETs aimed at battery protection apps

Posted: 12 Aug 2002 ?? ?Print Version ?Bookmark and Share

Keywords:vishay siliconix? power mosfet? trenchfet mosfet? micro foot? si8900edb?

Vishay Siliconix has announced the availability of five new n-channel TrenchFET power MOSFETs aimed at battery-protection applications in one- and two-cell Li-ion and Li-polymer battery packs and circuitry.

These common-drain devices provide protection against overcurrent and overvoltage conditions during charging and, with a reverse blocking function, preventing discharge back into the ac source once the battery is fully charged.

For applications that require the lowest possible on-resistance, the MICRO FOOT Si8900EDB features an on-resistance of 24mW at a 4.5V gate drive and an average footprint area of 8.07mm2. Another device, the Si8902EDB occupies a 3.68mm2 footprint with an on-resistance of 45mW at 4.5V gate drive.

Both bidirectional 20V MICRO FOOT devices feature a profile of just 0.62mm and fit easily on slim PCBs in narrow, handheld electronics. Both devices also provide 4kV ESD protection.

For applications such as wall adapters that require a 30V device, the Si6876EDQ power MOSFET offers an on-resistance of 30mW at 4.5V gate drive in a TSSOP-8 package. When a lower breakdown voltage is acceptable, the 20V Si6880EDQ provides 18mW at 4.5V gate drive on-resistance and is specified for operation down to 1.8V.

The Si6880EDQ also is available in the TSSOP-8 package. Both devices feature ESD protection of 4kV.

For applications demanding enhanced thermal performance, the 30V Si7902EDN dual common-drain power MOSFET is available in a PowerPAK 1212-8 package with profile of 1.07mm and a footprint 10.56mm2 - about half the size of the TSSOP-8.

It features an on-resistance value of 28mW at 4.5V gate drive and 3kV EDN protection.

All five power MOSFETs are rated for operation over a temperature range of -550C to 1500C.





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