Vishay ships industry's first silicon-based RF capacitor

The HPC0402A RF capacitor from Vishay Intertechnology Inc. is claimed to be the industry's first silicon-based RF capacitor that boosts electrical performance while reducing the board space required for circuitry in cellphones and other wireless communication systems.

The construction of the device decreases the distance between components, reducing parasitic lines and improving circuit performance. The design also brings the capacitor's self-resonant frequency to ultra-high frequencies, while the bump structure eliminates the tombstone effect, providing a flat top area for better pick-and-place assembly and allowing board-size reductions of up to 45 percent.

Capacitance ranges from 0.6pF to 180pF with 11 percent tolerance and voltage ratings of 6V, 10V, 16V, or 25V. The 1.02-by-0.51-by-0.4mm device features a 130ppm/0C TCC and is rated for operation over the -550C to 1250C temperature range. It has an expected lifespan of 1,000h at 1250C at twice the rated power.

Vishay is an exhibitor at the IIC-China Fall 2002 and the 5th Annual Communications Design China & Exhibition to be held from September 19 to 20 in Guangzhou and from September 23 to 24 in Chengdu. Both eeEvents are organized by eMedia Asia Ltd, a Global Sources and CMP Media joint venture.