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Tachyonics develops low noise RF transistor

Posted: 13 Sep 2002 ?? ?Print Version ?Bookmark and Share

Keywords:tachyonics? rf transistor? sige hbt? mpw? multi project wafer?

Tachyonics Co. Ltd has announced that it has developed an RF transistor that features a NF <1dB at 2GHz, 2V. Manufactured using the company's SiGe HBT process, the device is suitable for use in portable RF devices such as cellphones, WLAN equipment, and Bluetooth and GPS devices.

In addition, the company has also announced the launch of the Multi Project Wafer foundry service aimed at RF IC design companies, universities, and laboratories that require a foundry-type production line.





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