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AMD develops technology for transistor enhancement

Posted: 16 Sep 2002 ?? ?Print Version ?Bookmark and Share

Keywords:transistors? complementary metal oxide semiconductor? fin field effect transistor? cmos? finfet?

AMD said that they have fabricated the smallest double-gate transistors reported to date using industry standard technology. These transistors, measuring 10nm in length (gate), are six times smaller than the smallest transistors currently in production.

AMD's laboratory demonstration of 10nm CMOS Fin Field Effect Transistor (CMOS FinFET) is the outcome of a collaborative research between AMD and the University of California, Berkeley with support from the Semiconductor Research Corp. (SRC). The devices were fabricated in AMD's Submicron Development Center.

"The entire semiconductor industry is working to meet the increasing challenges of developing new transistor designs that are smaller and yet can be manufactured with minimal deviation from today's industry standards," said Craig Sander, AMD's VP of Technology Development. "The FinFET transistor indicates we can continue to deliver very high performance products while preserving the basic technology infrastructure our industry relies upon."





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