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National Semiconductor licenses MoSys memory technology

Posted: 19 Sep 2002 ?? ?Print Version ?Bookmark and Share

Keywords:embedded memory technology? cellular baseband soc? mosys? sram? transparent error correction?

National Semiconductor has licensed MoSys Inc.'s 1T-SRAM embedded memory technology to enable the incorporation of National's memory blocks into their future cellular baseband SoCs.

The license agreement will initially be used for products built in the 0.135m process generation using MoSys' 1T-SRAM-R technology that incorporates Transparent Error Correction, to eliminate the need for the laser repair manufacturing step while providing improved soft error rate, yield and reliability compared to other embedded memory technologies.

"The 1T-SRAM embedded memory solution was evaluated according to our requirements. By using MoSys' 1T-SRAM embedded memory, our customers will benefit from the high density, low power advantages this technology delivers," said Mal Humphrey, director of the cellular solutions product line within National's wireless division.

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