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SanDisk, Toshiba collaborate to enhance NAND Flash

Posted: 11 Oct 2002 ?? ?Print Version ?Bookmark and Share

Keywords:90nm process technology? NAND flash memory?

SanDisk Corp. and Toshiba Corp. have partnered to develop a 90nm process technology aimed at increasing overall supply and improved competitiveness of NAND Flash memory.

The joint development calls for various capacities, including 2Gb and 4Gb MLC NAND flash memory devices, as well as various smaller densities. The 90nm technology is expected to allow for the doubling of capacities from previous generations of 130nm products.

The integration of multiple 4Gb flash chips on a single memory card aims to enable handheld computers, mobile phones, digital cameras, or other devices to store feature-length DVD-quality videos, thousands of high-resolution images, more than 30 hours of digital music or gigabytes of computer files. Both companies also plan to offer MLC NAND flash in addition to binary NAND flash using the same process to advance product competitiveness and increase available output.

Toshiba's expertise in NAND flash process technology and the multilevel cell (MLC) technology pioneered by SanDisk is expected to accelerate the joint development of 90nm process technology and contribute to the early launch of 2Gb (binary) and 4Gb MLC NAND flash memory. Sampling of the 90nm devices is scheduled for the second half of 2003, and production for Q1 in 2004.

The 90nm NAND memory chips will be produced for both companies in Toshiba's fabrication production facility at Yokkaichi, Japan, under the FlashVision Joint Venture established by Toshiba and SanDisk.





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