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TDI to sample breakthrough p-type GaN substrates

Posted: 24 Oct 2002 ?? ?Print Version ?Bookmark and Share

Keywords:Technologies and Devices Int. Inc. (TDI)? a privately owned developer and manufacturer of novel compound semiconductor materials? has announced a breakthrough in GaN compound semiconductor material growth technology? by demonstrating 2-inch diameter GaN templates with p-type electrical conductivity.?

Technologies and Devices Int. Inc. (TDI), a privately owned developer and manufacturer of novel compound semiconductor materials, has announced a breakthrough in GaN compound semiconductor material growth technology, by demonstrating 2-inch diameter GaN templates with p-type electrical conductivity.

GaN is the compound semiconductor material used for the fabrication of blue spectrum LEDs, laser diodes, and high-frequency/high-power transistors. According to TDI, while the availability of n-type GaN material has been progressing, the lack of availability of cost effective thick p-type material has hampered the development and commercial availability of many types of advanced devices.

The p-type GaN template which was developed by TDI, consists of a sapphire substrate and high quality, highly doped and thick p-type GaN epitaxial layering that is grown by Hydride Vapor Phase Epitaxy (HVPE). The concentration of electrical carriers in the GaN layer can be varied in a wide range of 10 to the 16th per cubic centimeter through 10 to the 18th per cubic centimeter. According to current industry data, only n-type thick GaN layers have been grown by HVPE, whereas, the industry has been long awaiting p-type material.

"The benefits of GaN HVPE growth technology have included low production cost, high material quality and high growth rate. Combining that with p-type doping capability opens an opportunity to design, develop, and fabricate novel GaN devices that were not previously possible," explained Vladimir Dmitriev, president and CEO of TDI. "TDI's sampling of p-type templates, using our patented HVPE technology opens a new avenue for GaN device development."

TDI plans to move p-type GaN templates into large-volume production in Q1 of next year.





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