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IR MOSFET replaces electromechanical relays

Posted: 13 Nov 2002 ?? ?Print Version ?Bookmark and Share

Keywords:international rectifier? irf3000? power mosfet? hexfet? n channel mosfet?

International Rectifier has introduced the IRF3000 n-channel power MOSFET that is positioned as a replacement for electromechanical relays in telecommunications and networking applications.

The company claims that the 3kV HEXFET device is more efficient than an electromechanical relay, with more than 90 percent reduction in on-state resistance compared to relays, thereby minimizing conduction losses. The MOSFET also has a low gate charge to reduce switching losses.

"Telecom and networking systems require very high reliability. Electromechanical relays have a life expectancy of 100 thousand to 10 million operations. Under similar load conditions, the IRF3000 can expect a life expectancy approaching a billion switching cycles, which significantly improves overall system reliability," said Carl Smith, Marketing Manager for Networking and Telecommunication Products at International Rectifier.

Available in an SO-8 package, the IRF3000 is designed for switching applications requiring a current switch of up to 1.6A with up to 200V input that do not require isolation, or when the load voltage does not reverse in polarity. The IRF3000 is also suitable for use in high frequency dc/dc converters and features a breakdown voltage of 300V.

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