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Infineon, Nanya ink DRAM joint venture

Posted: 19 Nov 2002 ?? ?Print Version ?Bookmark and Share

Keywords:memory chips? dram? wafer? ntc? infineon?

Infineon Technologies and Nanya Technology Corp. have signed final contracts concerning a strategic cooperation on standard memory chips (DRAMs).

The cooperation is expected to help each partner expand its position in the DRAM market while sharing development costs. The agreement provides for the joint development of advanced 0.09 and 0.075m production technologies for 300mm wafers.

Under the terms of the agreement the companies have set up a 50/50 joint venture that will manufacture DRAM chips and will build a new joint 300mm facility in Taiwan. This facility will employ the production technology developed jointly by the companies. Maximum production capacity is estimated to approach 50,000 wafers a month once the facility is fully operational. Initial production of the first 300mm wafers in the new facility is expected in late 2003.

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