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Cree, Nichia enter GaN cross patent license agreement

Posted: 19 Nov 2002 ?? ?Print Version ?Bookmark and Share

Keywords:nitride-based optoelectronic technology? LEDs? laser diodes? LED-based lighting?

Cree Inc. and Nichia Corp. have entered into a patent cross license agreement concerning gallium nitride-based optoelectronic technology.

The agreement is also expected to settle all litigations between the companies and allow the companies to focus more resources on developing technology for next-generation high brightness LEDs, laser diodes, and LED-based lighting.

"This cross license and settlement of litigation with Cree is almost the final step of our aggressive plan of licensing and settlement of patent issues for this year," said Noboru Tazaki, senior managing director and division chief of the Optoelectronics Products Division of Nichia. "This is also a good time for both companies to focus on the development and improvements in technology, production, and market development."





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