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Toshiba, Sony announce breakthrough in IC process

Posted: 05 Dec 2002 ?? ?Print Version ?Bookmark and Share

Keywords:CMOS process technology? DRAM? LSIs?

Toshiba Corp. and Sony Corp. have announced that they have jointly developed a 65nm CMOS process technology for embedded DRAM system LSIs. A breakthrough in process technology for compact, the single-chip system LSIs will be only one-fourth the size of current devices while offering high levels of performance and functionality.

Ubiquitous computing, or having total connectivity at all times, requires advanced SoC LSIs integrating ultra-high performance transistors and embedded high-density DRAM. In such devices, size and performance levels are directly related to process technology: finer lithography results in smaller devices that offer higher levels of performance. The process technology introduced by Toshiba and Sony allows bandwidths to be scaled up and maximizes system performance.





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