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Hitachi improves performance of wireless comm ICs

Posted: 23 Dec 2002 ?? ?Print Version ?Bookmark and Share

Keywords:metal-insulator-metal capacitor? wireless communications ic? mim? ai203?

Hitachi Ltd has announced that its Central Research Laboratory has developed a technology that more than triples the capacitance density of metal-insulator-metal (MIM) capacitors in wireless communications ICs.

In order to develop the technology, Hitachi researchers introduced Al2O3 barrier layers in a capacitor with a Cu/Ta2O5/Cu structure. The quality of the Al2O3 films was then improved to more effectively prevent atom diffusion between the layers. This made it possible to form a more reliable, thinner Ta2O5 capacitive insulating film in a low-temperature process.

The research group has demonstrated that MIM capacitors formed using the new technology maintain proper function at capacitance densities up to 12 femtofarads per square ?m and frequencies up to around 10GHz.

With capacitors taking up less chip area now, Hitachi plans to design more integrated RF analog digital ICs for use in wireless communications systems.

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