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Shipley, Therma-Wave ink nano-metrology development deal

Posted: 23 Dec 2002 ?? ?Print Version ?Bookmark and Share

Keywords:scatterometric methods? photoresist? poly silicon gate? resistor?

Shipley Co. has signed a joint development agreement with Therma-Wave Inc. in which the two companies will co-develop scatterometric methods to better measure 130nm photoresist features for polysilicon gate and shallow trench applications.

The measurement of critical dimensions (CD) of less than 200nm has posed considerable difficulties using conventional CD-SEM techniques due primarily to charging and subsequent heating of resist features during the measurement process. The absorbed energy, as a consequence of measurement, degrades the polymeric resist materials and causes them to shrink.

Shipley and Therma-Wave intend to use Therma-Wave RT/CD, a real-time, critical dimension system, installed on a Therma-Wave Opti-Probe 5230 system. The RT/CD system uses scattered light across wavelengths from 185nm to 800nm to measure DUV and 193nm resist patterns without heating the measured features. When fully developed, it is expected that the RT/CD system will have the potential to measure features required for the 65nm technology node and beyond.

Additionally, Shipley and Therma-Wave plan to place an Opti-Probe 7360 tool with integrated RT/CD functionality at the new Shipley Advanced Technology Center. Numerous resist formulations for 248nm and 193nm lithography will be tested throughout the term of the agreement.

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