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IR MOSFETs boast low on-resistance

Posted: 14 Jan 2003 ?? ?Print Version ?Bookmark and Share

Keywords:international rectifier? irlr7833? irlr7821? hexfet? power mosfet?

International Rectifier has introduced the IRLR7833 and IRLR7821 HEXFET power MOSFETs that are designed using the latest stripe-trench technology, allowing low on-resistance.

The new technology also enables both devices an efficiency boost of 2.5 percent or up to 25 percent reduction in part count, compared to competing devices. The MOSFETs are designed for synchronous buck converter circuits in servers, desktops, notebooks, and point-of-load (POL) converters in networking and communications equipment. The IRLR7833 can also be used for secondary side synchronous rectification for isolated converters.

The IRLR7833 offers an on-resistance of 4.5 milliohms - half that of the company's previous products - and is suited for synchronous MOSFET applications. The IRLR7821 exhibits a gate charge of 10nC, making it suitable for use as a control MOSFET. Both devices have a 20V gate rating for improved ruggedness.

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