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GaAs Schottky diodes feature fast recovery times

Posted: 20 Jan 2003 ?? ?Print Version ?Bookmark and Share

Keywords:directed energy? gaas schottky diode? power supply diode? high frequency diode? de 150 package?

Directed Energy Inc. has introduced a family of high-speed, high-voltage GaAs Schottky diodes that offers fast recovery times, while exhibiting low forward voltage drops.

These attributes make the diodes suitable for high frequency switching power supplies, high frequency converters, resonant converters, and other applications that require faster recovery than those currently available in silicon carbide diodes.

The portfolio contains products for currents of 4, 10, 20, 30, and 50A with voltage ratings of 250V. The devices can be "stacked" for applications requiring higher breakdown voltages. Each device contains three diodes in three different configurations: triple independent, triple common cathode, and triple common anode.

The diodes are encased in the low inductance, electrically isolated, and surface-mount DE-150 package. The package utilizes a direct copper bonded aluminum nitride substrate, which has a closely matched thermal coefficient of expansion to that of the GaAs diode, resulting in improved reliability and power cycling performance.

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