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TI launches first 90nm-based chip

Posted: 29 Jan 2003 ?? ?Print Version ?Bookmark and Share

Keywords:texas instruments? digital baseband ic? 90nm process? soc process?

Texas Instruments Inc. has delivered a fully-functional wireless digital baseband IC from its next-generation, 90nm process.

The 90nm process features transistors measuring 37nm, a width 2,000 times smaller than the thickness of newsprint. With the ability to pack over 400 million transistors on a single chip, TI's technology is expected to bring cost-effective SoC solutions with higher levels of performance and power savings for TI products.

With up to nine layers of cooper metal, the 90nm process also supports integration in a wide range of analog and RF components for SoC development. Integration of analog and RF components for communication Tx and Rx functions and for ADC and DAC circuits, is critical to signal processing applications.

Previous process generations typically utilized a single pair of CMOS transistors optimized to support all the circuit functions on a chip. However, TI's 90nm process enables a collection of transistors that are "tuned" for different functions on a single chip to meet various performance, density, and power consumption requirements. This is done through adjustments to the transistors' gate length, threshold voltage, gate oxide thickness or bias conditions.

The 90nm process integrates a low-k dielectric, Organo-Silicate Glass that has a k-value of 2.8. This process is the 3rd generation of TI's technology to use a Plasma Nitride Oxide for the core transistors, which will be scaled to 1.2nm.

In 2005, the company plans to deliver its 90nm embedded FRAM technology - a low cost, high density, low-power, non-volatile memory alternative.





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