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SiGe transistors match noise level of GaAs devices

Posted: 05 Feb 2003 ?? ?Print Version ?Bookmark and Share

Keywords:toshiba? sige transistor? gaas transistor? rf transistor?

Toshiba Corp. has developed high frequency SiGe transistors that are capable of matching the low noise level of more expensive GaAs transistors.

Utilizing an epitaxial-based bipolar transistor process technology, the company was able to manufacture SiGe transistors that exhibit a noise figure of 0.52dB (2GHz) and 1.16dB (5.2GHz) with a gain of 17dB and 13dB, respectively. These characteristics make them suitable for use in ultra high frequency LNAs required by GPS and WLAN systems.

The 4-pin SiGe transistors are packaged in the company's TESQ package measuring 1.2-by-1.2-by-0.52mm and are priced at about 41.6 cents.





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