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Symetrix, Oki to collaborate for non-destructive read out FeRAM

Posted: 24 Feb 2003 ?? ?Print Version ?Bookmark and Share

Keywords:symetrix? non-destructive read out ferroelectric ram? oki electric? feram lsi?

Symetrix Corp. has licensed its Non-Destructive Read Out (NDRO) FRAM technology to Oki Electric Industry Co., Ltd., who will also serve as foundry for the NDRO FeRAM using its 0.255m process.

Symetrix developed it FeRAM technology using Y-1 (layered perovskites) material in mid-1990s. The material works even after 10 trillion erase/write operations, according to Symetrix. "But when using it for a program memory, reading out endurance was still insufficient. The NDRO memory has limitless read-out times thanks to non-destructive read out operation, and it can be used for wider applications," an Oki spokesman said.

The NDRO FeRAM is based on Symetrix' new cell technology called Trinion Cell. Symetrix would not disclose details.

Symetrix and Oki also will collaborate in developing 16Mb devices. The U.S. company will handle designs while Oki develops a process to fabricate engineering samples. Samples will be available in Q4 of 2003.

The 16Mb memory features 1.8V operation, <20ns cycle time and SRAM comparable speed, according to Symetrix.

"Practical products may have a smaller capacity than 16Mb, depending on applications," Oki said.

Oki will produce the FeRAM mainly as embedded FeRAM LSIs. Oki said it would serve as a FeRAM foundry for both Symetrix and its licensees. Symetrix intends to sell the memory as embedded as well as standalone memories.

Oki previously licensed conventional, destructive read out-type FeRAM technology from Symetrix in 2001. It has completed development of embedded FeRAM LSIs and is now promoting the device to customers.

- Yoshiko Hara

EE Times





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