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Bookham introduces latest etch process

Posted: 11 Mar 2003 ?? ?Print Version ?Bookmark and Share

Keywords:bookham technology? in-situ etch? regrowth process? inp laser? aluminum gallium indium arsenide?

Bookham Technology plc has developed an in-situ etch and regrowth process for uncooled InP buried-heterostructure lasers that is said to result in 50 percent lower rates of burn-in degradation than can be obtained by current standard processes.

According to Bookham, the times-2 burn-in improvement is a promising solution for increasing the long-term reliability of the devices, which also exhibit 20 percent lower threshold currents. The new process is also compatible with the newer AlGaInAs materials systems.

Further, the in-situ etching process reportedly eliminates the problem of post-etching surface damage or contamination by performing the etching step within the MOCVD reactor itself. Overgrowth is performed immediately on the clean freshly etched surface, preventing the surface contaminations and oxidation that can occur in the standard process of using an external etcher to which the material has to be transferred at the risk of damage and contamination.

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