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Hynix commercializes FeRAM for mobile apps

Posted: 11 Mar 2003 ?? ?Print Version ?Bookmark and Share

Keywords:hynix semiconductor? ferroelectric ram? feram? random access memory? ram chip?

Hynix Semiconductor Inc. has announced that it is sampling 4Mb and 8Mb Ferroelectric RAMs (FeRAMs) for use in next-generation mobile and SoC applications.

Manufactured using the company's advanced 0.257?m process, the FeRAMs operate at 3V, exhibit a data access time of 70ns, and are capable of 100 billion R/W cycles.

Unlike existing products that are composed of two transistors and two capacitors, the FeRAMs adopt a one transistor, one capacitor cell structure and are capable of operating at voltages down to <1V. In addition, by applying new circuit concepts and ferroelectric material (i.e. Bismuth Lanthanum Titanate), the company claims to have improved the devices stability and reliability while shrinking its die size.

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