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Sirenza receives patent for SiSiC devices

Posted: 14 Mar 2003 ?? ?Print Version ?Bookmark and Share

Keywords:sirenza microdevices? rf component? microwave? transistor? silicon carbide?

Sirenza Microdevices Inc., a designer and supplier of RF components for communications equipment manufacturers, has been issued U.S. Patent No. 6,521,923 entitled "Microwave Field Effect Transistor Structure on Silicon Carbide." This is Sirenza's first patent on this new class of semiconductors.

The patent discloses a new structure for 1- to 4GHz devices that is said to offer higher power microwave performance than those currently available. This new patented device structure, coupled with other Sirenza device improvements, will be integrated into Sirenza's future power amplifier module products targeting the wireless infrastructure market.

"This innovation makes possible a new class of semiconductors demonstrating significant improvement in saturated output power, in power-added efficiency and in power gain over current state-of-the-art LDMOS devices. Additionally, this technology can lead to major reductions in thermal resistance, resulting in lower junction temperatures and enhanced long term device reliability," stated Pablo D'Anna, director of LDMOS technology for Sirenza.

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