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IMEC, NSC partner on process technology development

Posted: 25 Mar 2003 ?? ?Print Version ?Bookmark and Share

Keywords:imec? national semiconductor? bicmos process technology? sige hbt module? cmos process?

Microelectronics R&D center IMEC, and National Semiconductor Corp. (NSC) have entered a four-year contract to jointly develop an 0.18?m and follow-up generation of SiGe-based BiCMOS process technology optimized for low-power applications. The technologies will be utilized by NSC at its Maine, U.S.A. manufacturing facility.

Since January 2002, IMEC and National have been developing a 0.18?m SiGe HBT (hetero-junction bipolar transistor) module for integration into NSC's existing BiCMOS process family. Under terms of the nonexclusive agreement, IMEC will license its 0.18?m SiGe HBT module to National along with the test chip structures and bipolar model.

NSC will integrate the SiGe HBT module into its existing 0.18?m CMOS process without changes to the CMOS performance. A suite of RF passive components such as spiral inductor, varactor, metal-insulator-metal (MIM) capacitor and polysilicon resistors will also be fully integrated into the process giving NSC enhanced process capabilities for RF designs targeted at next-generation RF market needs.

Many of NSC's products are expected to benefit from these SiGe-based devices.

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