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FEI offers system to modify 90nm chips

Posted: 03 Apr 2003 ?? ?Print Version ?Bookmark and Share

Keywords:fei company? fei? vectravision? ic rework? circuit editing?

FEI Company has announced the development of a new focused ion beam (FIB) system capable of accessing and rewiring the metal stacks on 90nm ICs.

According to product marketing manager Nicholas Antoniou, the system provides the same ability to modify interconnect on flip-chip 90nm ICs that users have enjoyed previously on 180nm and 130nm face-up devices.

The system combines a FIB column with enhanced resolution, gas-enhanced etch and beam deposition capability, endpoint sensing and new IR imaging capability, and pattern recognition software. In addition the system offers a new level of stage control with laser interferometer sensing and tilt/rotate capability.

Antoniou said that the system, named VectraVision, is now fully capable of doing circuit editing on 90nm dice. In addition, the system has been designed to be field-upgraded to support the 65nm node. "We have identified the additional technologies we will need, and made provision for them in this system," Antoniou said. One example was the laser stabilization of the stage - not strictly necessary for 90nm, but vital for 65nm work.

Another example is the back-side navigation technique that FEI is evolving. "At 65nm, and particularly with the new dielectric materials being investigated, there can be considerable concavity or convexity to the surface," said Antoniou. "In order to drill through to contacts and actually hit them, it is necessary to identify reference areas on the surface of the die with the IR imaging equipment, and build a conformal map of the surface to predict the distortions."

- Ron Wilson

EE Times





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