Zetex H-bridge MOSFET replaces four discrete devices

The ZXMHC6A07T8 MOSFET H-bridge of Zetex Semiconductors comes in a 7.3-by-6.7mm SM8 package and is capable of replacing up four discrete MOSFETs.

The IC co-packages n- and p-channel trench MOSFETs that exhibit on-resistances of 0.3 ohms and 0.425 ohms, respectively, as well as 60V breakdown capability, making the MOSFET easier to drive.

The proprietary lead frame design of the SM8 package provides a thermal resistance of 56°C/W that allows for cool running and results to a power dissipation of 2.25W, as well as an output current of up to 2.2A.