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AMD reveals breakthrough transistor research

Posted: 09 Apr 2003 ?? ?Print Version ?Bookmark and Share

Keywords:amd? transistor? pmos? soi?

Advanced Micro Devices Inc. (AMD) has announced that they have come up with significant research for next-generation transistor development. According to AMD, its researchers have created and demonstrated a transistor that is up to 30 percent faster than among the best published PMOS (p-channel metal-oxide semiconductor) transistors. The transistor employs proprietary AMD technologies involving what is commonly referred to as "Fully Depleted SoI."

In related research, AMD researchers have also demonstrated a strained silicon transistor that they claim has achieved a 20-25 percent higher performance than conventional strained silicon devices through the successful use of metal gates.

"By staying at the forefront of research on transistors that operate with higher performance, less current leakage and lower voltage requirements, we are providing AMD design teams with the building blocks that are needed to create the solutions customers want," said Craig Sander, VP of process technology development at AMD.

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