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ISSI asynchronous SRAMs offer 20ns access times

Posted: 02 May 2003 ?? ?Print Version ?Bookmark and Share

Keywords:integrated silicon solution? issi? asynchronous sram? static ram? is64lv6416al?

Integrated Silicon Solution Inc. (ISSI) has announced the availability of the a pair of 1Mb asynchronous SRAMs that offer a access times of 20ns, while drawing 12mA during operation and 4?A during standby.

The IS64LV6416AL and the IS64LV1024AL are configured as 64Kx16 and 128Kx8, respectively, and are designed for automotive applications. They operate at 2.5V and have a wide data retention voltage range of 1.2V to 3.6V. The SRAMs are offered in A1(-40C to 85C), A2(-40C to 105C), and A3(-40C to 125C) automotive temperature ranges.

Similar to the company's recently released 8Mb high speed asynchronous SRAMs, the 64LV6416AL is also fabricated using high-performance 6T 0.15?m CMOS technology to lower the power consumption of the device.

For quantities of 10,000, the 1Mb SRAM is priced at $2.00. The IS64LV1024AL is available in 36-ball mBGA, and 32-pin TSOP(II) JEDEC standard packages, while the IS64LV6416AL is available in 48-ball mBGA, and 44-pin TSOP(II) JEDEC standard packages.

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