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Mitsubishi Electric forms new semiconductor division

Posted: 06 May 2003 ?? ?Print Version ?Bookmark and Share

Keywords:mitsubishi electric? compound semiconductor? discrete semiconductor? microwave? rfgallium arsenide?

Mitsubishi Electric & Electronic USA Inc. has established a new semiconductor division which will provide compound semiconductors in discrete and module form for optoelectronic and microwave/ RF customers based in North America.

The new division will remain headquartered in California's Silicon Valley area and will provide marketing, sales, and application engineering support. Regional sales offices and third-party sales and distribution channels will also be located throughout the U.S. and Canada.

The company produces GaAs field-effect transistors, modules, and monolithic microwave ICs using hetero-bipolar transistor (HBT), pseudomorphic high electron mobility transistor (PHEMT), metal semiconductor FET (MESFET), and heterostructure FET technologies. The company also manufactures silicon RF power transistors and modules using MOS (MOS) and lateral diffused MOS (LDMOS) technologies for the industrial and consumer markets.





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