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RF/Microwave??

IceFyre amps adopt TriQuint GaAs pHEMT process

Posted: 29 May 2003 ?? ?Print Version ?Bookmark and Share

Keywords:IceFyre Semiconductor? WLAN? power amplifier?

IceFyre Semiconductor Inc., a provider of solutions for WLAN products, has selected TriQuint Corp.'s 0.5?m GaAs pHEMT (Gallium Arsenide Pseudomorphic High Electron Mobility Transistor) process technology to fabricate its switch-mode 802.11a and a/b/g power amplifier products.

IceFyre will use the TriQuint process technology and production capacity to deliver an important element of its SureFyre 802.11a and TwinFyre 802.11a/b/g system solutions. IceFyre's components offer performance and power consumption solutions to manufacturers of residential audio visual, premium infrastructure, and client applications including laptop client adaptors, PDAs, VOIP phones, and cellular handsets.





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