Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > RF/Microwave

IceFyre amps adopt TriQuint GaAs pHEMT process

Posted: 29 May 2003 ?? ?Print Version ?Bookmark and Share

Keywords:IceFyre Semiconductor? WLAN? power amplifier?

IceFyre Semiconductor Inc., a provider of solutions for WLAN products, has selected TriQuint Corp.'s 0.5?m GaAs pHEMT (Gallium Arsenide Pseudomorphic High Electron Mobility Transistor) process technology to fabricate its switch-mode 802.11a and a/b/g power amplifier products.

IceFyre will use the TriQuint process technology and production capacity to deliver an important element of its SureFyre 802.11a and TwinFyre 802.11a/b/g system solutions. IceFyre's components offer performance and power consumption solutions to manufacturers of residential audio visual, premium infrastructure, and client applications including laptop client adaptors, PDAs, VOIP phones, and cellular handsets.

Article Comments - IceFyre amps adopt TriQuint GaAs pHE...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top