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Toshiba transistor made from HfSiON

Posted: 12 Jun 2003 ?? ?Print Version ?Bookmark and Share

Keywords:toshiba? cmos transistor? hafnium silicate oxide nitride? hfsion?

Toshiba Corp. has developed a CMOS transistor that reduces gate leakage current to 1/1,000 that of conventional CMOS devices.

The company replaced the silicon dioxide in the transistor gate dielectric with hafnium silicate oxide nitride (HfSiON), a high-k material, and developed a fabrication process for HfSiON gate dielectric film targeting 65nm CMOS applications.

Various thermal processes were necessary to produce the CMOS device. To wit, the gate dielectric was subjected to temperatures reaching up to 1,000C. Forming the HfSiON gate dielectric by plasma nitridation demonstrated high thermal durability at up to 1,050C without

phase-separation or crystallization.





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