Toshiba, SanDisk co-develop NAND cell architecture

Toshiba Corp. and SanDisk Corp. have announced the development of a high density NAND flash memory cell structure that allows fabrication of 4Gb NAND flash memory using the 90nm design rules. The new memory cell has a physical cell area of 0.041?m?, and supports scaling to future generations of smaller feature design rules.

The two companies plan to employ the new NAND cell technology starting in 1H of 2004 with 2Gb and 4Gb NAND flash memory chips that will be manufactured by their FlashVision Japan Joint Venture production facility located at Toshiba's Yokkaichi plant in Japan.