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Cree Microwave RF transistor offers >13dB gain

Posted: 16 Jun 2003 ?? ?Print Version ?Bookmark and Share

Keywords:cree microwave? crf-24010? silicon carbide mesfet? sic mesfet process?

The company has released the CRF-24010, a Class AB 10W silicon carbide device that is based on the company's 2G 48V MESFET process. The product features a minimum gain of 13dB at 2GHz, and an IM3 of -31dBc at 10W peak envelope power.

The product has multi-octave instantaneous bandwidth, and has passed initial internal product reliability tests.

John Palmour, Cree's executive VP of advanced devices, said, "An additional benefit of this Class AB SiC MESFET process versus our previous Class A process is that the power added efficiency under rated conditions increases from 38 percent to >44 percent at 1dB."

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