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Toshiba announces latest embedded memory technology

Posted: 17 Jun 2003 ?? ?Print Version ?Bookmark and Share

Keywords:toshiba? memory cell technology? embedded dram system? lsi? soi wafer?

Toshiba Corp. has developed and verified the operability of a memory cell technology for embedded DRAM system LSIs on silicon-on-insulator (SOI) wafers. Toshiba aims to apply the new technology to mass production of system LSIs for broadband network applications in 2006.

The move towards ubiquitous computing relies on high-performance equipment, requiring advanced system LSIs integrating ultra-high performance transistors and embedded high-density memory. According to Toshiba, one promising measure to dramatically raise transistor processing speed is fabrication of system LSI on a new-generation silicon substrate, SOI.

However, the conventional DRAM cell structure is designed for conventional bulk wafers and it is difficult to produce embedded DRAM on SOI wafer. Toshiba said that they have experimentally fabricated a 96Kb cell array and verified the practical operability of the advanced cell structure with sufficient characteristics required for embedded DRAM system LSIs on SOI.

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