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TAEC GaAs FET targets satcom systems

Posted: 04 Jul 2003 ?? ?Print Version ?Bookmark and Share

Keywords:toshiba? c-band gallium arsenide field effect transistor? gaas fet? tim5964-90sl? heterojunction field effect transition process technology?

Toshiba America Electronic Components (TAEC) Inc. has released what it claims to be the industry's first 90W c-band gallium arsenide field effect transistor (GaAs FET) that is suitable for use in solid-state power amplifiers (SSPA) for basestation or earth-station satcom and radar applications, as well as for microwave digital radios for terrestrial communications.

Implemented in the company's HFET process technology, the TIM5964-90SL GaAs FET employs ion plantation technology to produce an output power of 49.5dBm at a frequency range of 5.9GHz to 6.4GHz.

Business Development Manager Toshi Nakamura said, "The development of this 90W solution will enable customers to design higher performance SSPAs, and can simplify existing designs by reducing the part count by replacing multiple lower power GaAs FETs with this 90W device."

The TIM5964-90SL is priced at $1,500 each.

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