Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Controls/MCUs

Matsushita FeRAM employs 0.18?m process

Posted: 10 Jul 2003 ?? ?Print Version ?Bookmark and Share

Keywords:matsushita electric? feramram? ferroelectric random-access memory? system-on-a-chip? soc?

Matsushita Electric Industrial Co. Ltd has developed what it claims to be the world's first FeRAM-embedded system-on-a-chip (SoC), which uses 0.18?m process technology.

The FeRAM offers high-speed writing, low-power consumption, and the ability to preserve its contents without electrical power. Compared to conventional FeRAMs using the 0.35?m CMOS processes, the FeRAM-embedded SoCs have larger memory capacity.

Dr. Susumu Koike, President of Matsushita's Semiconductor Company, said, "Advanced FeRAM-embedded SoCs will provide mobile electronic devices such as future TVs and cellular phones with reconfigurable functionality to allow for various data communication methods."

Article Comments - Matsushita FeRAM employs 0.18?...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top