Stay in touch with EE Times Asia

EE Times-Asia > RF/Microwave

RF/Microwave??

NEC SiGE transistor powers wireless LANs

Posted: 17 Jul 2003 ?? ?

Print Version ?

Keywords:nec? silicon germanium bipolar transistor? sige bipolar transistor? nesg3031m05? nesg3031m14?

NEC Compound Semiconductor Devices Ltd and NEC Electronics GmbH have released a silicon germanium (SiGe) bipolar transistor called the NESG3031 that was developed using the company's SiGe Heterojunction Bipolar Transistor semiconductor process technology (UHS3 process).

Featuring an operating frequency of 5.2GHz and noise factor of 0.95dB, the bipolar transistor is suitable for high-frequency, low-noise amplifiers used in wireless LANs (WLAN), cordless telephones, and Electronic Toll Collection units.

The NESG3031 comes in a 4-pin M05 package with low parasitic resistance and capacitance, and in a 4-pin M14 package that measures 1.2-by-0.8mm. The transistors are priced at 30 cents each.