Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
?
EE Times-Asia > RF/Microwave
?
?
RF/Microwave??

NEC SiGE transistor powers wireless LANs

Posted: 17 Jul 2003 ?? ?Print Version ?Bookmark and Share

Keywords:nec? silicon germanium bipolar transistor? sige bipolar transistor? nesg3031m05? nesg3031m14?

NEC Compound Semiconductor Devices Ltd and NEC Electronics GmbH have released a silicon germanium (SiGe) bipolar transistor called the NESG3031 that was developed using the company's SiGe Heterojunction Bipolar Transistor semiconductor process technology (UHS3 process).

Featuring an operating frequency of 5.2GHz and noise factor of 0.95dB, the bipolar transistor is suitable for high-frequency, low-noise amplifiers used in wireless LANs (WLAN), cordless telephones, and Electronic Toll Collection units.

The NESG3031 comes in a 4-pin M05 package with low parasitic resistance and capacitance, and in a 4-pin M14 package that measures 1.2-by-0.8mm. The transistors are priced at 30 cents each.





Article Comments - NEC SiGE transistor powers wireless ...
Comments:??
*? You can enter [0] more charecters.
*Verify code:
?
?
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

?
?
Back to Top