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STMicro memory cell occupies 0.08?m?

Posted: 04 Aug 2003 ?? ?Print Version ?Bookmark and Share

Keywords:nor flash memory cell? sticroelectronics? 90nm technology?

The NOR flash memory cell released by STMicroelectronics is designed for low-voltage and high performance applications, and is built using the company's 90nm technology. Occupying a silicon area of 0.08?m?, the product realizes a 50 percent size reduction from the current 130nm generation.

According to Paolo Cappelletti, Director of Central R&D, "This technology provides two major benefits compared with today's 130nm processes: greatly reduced memory cell size and increased performance of the on-chip peripheral CMOS circuitry that enables data to be read from and written to the memory array."

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