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Toshiba memory cell technology eyes DRAM apps

Posted: 06 Aug 2003 ?? ?Print Version ?Bookmark and Share

Keywords:toshiba? memory cell technology? dram system lsi? silicon-on-insulator wafer?

Toshiba Corp. has developed and verified the operability of what it claims to be the world's first memory cell technology targeted for embedded DRAM system LSIs on silicon-on-insulator (SOI) wafers.

Unlike conventional bulk wafer, the SOI wafer comprises of three layers - one single-crystal layer of silicon, a base silicon substrate, and an insulator that is 1/1,000 the thickness of a human hair. This results in lower power consumption and higher processing speeds.

The memory cell technology, dubbed floating body cell (FBC), will be used for embedded DRAM system LSIs in the 45nm scale.

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