Ixys HiPerFET targets high power apps

IXYS Corp. has released a family of Q2-Class HiPerFETs that are suitable for use in high power and high frequency power conversion systems. The family of devices utilizes the company's second-generation HiPerFET process technology to reduce gate charge and internal gate resistance.

Providing high commutating dV/dt and UIS performance, the power MOSFETs possess an intrinsic fast recovery diode, reducing the recovery time of the body diode to 250ns or less. The Q2 HiPerFETs are available at rated voltages of 500V to 1,200V, with current ratings of 14A to 80A.

Offered in TO-247, PLUS247, ISOPLUS247, TO-264, PLUS264, and SOT-227 packages, the IXFH36N55Q2 device is rated at 36A and 550V with an Rds(on) of 160 milliohms and Qg of 105nC, and IXFH14N100Q2 is rated at 14A and 1,000V with an Rds(on) of 900 milliohms and Qg of 82nC.