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TAEC expands FCRAM II family

Posted: 29 Sep 2003 ?? ?Print Version ?Bookmark and Share

Keywords:dram? toshiba america electronic components? taec? toshiba? fast cycle random access memory ii?

Expanding its portfolio of DRAM technology, Toshiba America Electronic Components Inc. (TAEC) has released what it claims is the industry's first x36 configuration of 333MHz Network Fast Cycle Random Access Memory (FCRAM) II. The memory devices were developed by Toshiba Corp. in response to network equipment OEM demand for high performance, 333MHz FCRAM II memory devices to support system designs with wider I/O.

Offered in three speeds with cycle times of 3-, 3.3-, or 4ns, the TC59LM836MB-30/-33/-40 memory devices feature a DDR interface to support data rates of 666Mbps 333MHz clock and fast random access time of 20ns.

The 288Mb memory devices are organized as 2M words x 4 banks x 36 bits and provide extra bits to support parity or error detection and correction. The memory ICs also provide approximately 66 percent higher bandwidth than 200MHz FCRAM I memory devices.

The x36 FCRAM II devices feature a 2.5V power supply with a 1.8V I/O interface. It also features unidirectional data strobe signals for write and read operations to simplify system design. Additional functions, including programmable CAS latency and burst length as well as variable write length, enable the devices to meet specific application requirements.

Packaged in 144-pin ball grid arrays with a 0.8-by-1mm ball pitch, the products are priced at $45.

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